Organized by the IEEE Solid-State Circuits Society (IEEE SSCS), Heydari gave seminars on “Millimeter-wave and Terahertz Integrated Circuits in Silicon Technologies: Challenges and Solutions” to three Engineering Schools of Lehigh, Columbia, and Princeton Universities. Below is the short abstract of the seminar:
The vastly under-utilized spectrum across millimeter-wave (mm-wave) and terahertz (THz) bands has generated great deal of excitement to investigate futuristic systems for 10+ gigabit short-range wireless as well as wideband sensing/imaging applications. Simply put, the shorter wavelength associated with the mm-wave/THz band is appealing since the physical dimensions of the antenna and associated electronics are reduced in size, making it possible to design multi-antenna structures to achieve beam-forming, spatial diversity and multiplexing.
Owing to aggressive scaling in feature size and device maximum operation frequency, nanoscale (Bi)CMOS technology potentially enables integration of sophisticated systems at THz frequency range, once only be implemented in compound III-IV semiconductor technologies.
The Distinguished Seminar gave an overview of recent advances in designing silicon-based integrated circuits will be capable of operating close to the maximum operation limits of silicon-based transistors. The Seminar then discussed in depth about two case studies designed in UCI’s Nanoscale Communication Integrated Circuits (NCIC) Labs; namely, the world’s highest fundamental frequency fully differential transceiver in CMOS at 210 GHz, and the world’s highest frequency PLL-based Synthesizer in Silicon at 300GHz with a wide tuning range.
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